7 results
The Behavior of Ion Implanted Silicon During Ultra-High Temperature Annealing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 912 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0912-C04-04
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- 2006
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A photothermal method of simultaneous determination of ultra-shallow junction depth and abruptness
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- Journal:
- MRS Online Proceedings Library Archive / Volume 810 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, C11.7
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- 2004
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Ultra-Shallow Junction Formation Technology from the 130 to the 45 nm node
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- Journal:
- MRS Online Proceedings Library Archive / Volume 810 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, C5.6
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- 2004
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Modeling of Diffusion and Activation of Low Energy Arsenic Implants in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 717 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, C3.7
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- 2002
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Gettering of Iron and Surface Oxygen by High-Energy Boron ion Implantation in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 510 / January 1998
- Published online by Cambridge University Press:
- 10 February 2011, 233
- Print publication:
- January 1998
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Transient Enhanced Diffusion for Ultra Low Energy Boron, Phosphorus, and Arsenic Implantation in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 532 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 35
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- 1998
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Oxygen Stabilization of Damage Induced by Mev Ion Implantation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 469 / 1997
- Published online by Cambridge University Press:
- 15 February 2011, 481
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- 1997
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